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dc.contributor.authorEzgin, Hüseyin
dc.contributor.authorDemir, Ersin
dc.contributor.authorAcar, Selim
dc.contributor.authorÖzer, Metin
dc.date.accessioned2022-06-09T06:54:55Z
dc.date.available2022-06-09T06:54:55Z
dc.date.issued15.08.2022en_US
dc.identifier.citationEzgin, H., Demir, E., Acar, S., & Özer, M. (2022). Investigation of temperature-dependent electrical parameters in a Schottky barrier diode with multi-walled carbon nanotube (MWCNT) interface. Materials Science in Semiconductor Processing, 147, 106672.en_US
dc.identifier.issn1873-4081
dc.identifier.urihttps://doi.org/10.1016/j.mssp.2022.106672
dc.identifier.urihttps://hdl.handle.net/20.500.12933/1137
dc.description.abstractWe research the electrical parameters of the MWCNT/n-6H-SiC Schottky barrier diode (SBD) as a function of temperature. Voltage-dependent current and the capacitance measurements of the diode have been made between the temperatures of 300-480 K. The surface of the diode coated with CNT by drop drying method is examined by Scanning Electron Microscopy (SEM) and Raman Spectroscopy. It has been observed that MWCNTs coat on the semiconductor randomly and as entangled tubes, and the intensity in the D line is higher than in the G line. The ideality factor and barrier heights obtained from Thermionic Emission (TE) theory are in the range of 1.64-1.07 and 0.76-1.10 eV, respectively. The ideality factor and barrier heights of the produced diode are strongly related to temperature. By using Cheung-Cheung and Norde methods, series resistance, ideality factor, and barrier height parameters are calculated depending on temperature. It is effective in changing the series resistance of MWCNTs used as interface material. Capacitance-voltage (C-V) measurements of the MWCNT/n6H-SiC Schottky barrier diode are made at different frequencies at 300 K and a frequency of 1 MHz depending on different temperature. The increase of the produced diode capacitance at low frequencies is associated with the interface states.en_US
dc.language.isoengen_US
dc.publisherElsevieren_US
dc.relation.isversionof10.1016/j.mssp.2022.106672en_US
dc.rightsinfo:eu-repo/semantics/embargoedAccessen_US
dc.subjectSchottky barrier diodeen_US
dc.subjectElectrical parametersen_US
dc.subjectMWCNTen_US
dc.subjectn-6H-SiCen_US
dc.subjectInterface state densityen_US
dc.titleInvestigation of temperature-dependent electrical parameters in a Schottky barrier diode with multi-walled carbon nanotube (MWCNT) interfaceen_US
dc.typearticleen_US
dc.authorid0000-0001-9180-0609en_US
dc.departmentAFSÜ, Eczacılık Fakültesi, Temel Eczacılık Bilimleri Bölümüen_US
dc.contributor.institutionauthorDemir, Ersin
dc.identifier.volume147en_US
dc.identifier.startpage1en_US
dc.identifier.endpage10en_US
dc.relation.journalMaterials Science in Semiconductor Processingen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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